Тип публикации: статья из журнала

Год издания: 2018

Идентификатор DOI: 10.1134/S0040579518050238

Ключевые слова: Barium titanate, Ferroelectric materials, Ferroelectricity, Microelectronics, Microsystems, Porosity, Silicon compounds, Capacitor structures, Electrochemical treatments, Engineering elements, Microsystems engineering, Porous matrixs, Porous structures, P

Аннотация: The formation of heterostructures based on porous silicon with barium titanate for application in capacitive electronic and microsystem engineering elements has been experimentally investigated. The dependences of the capacitance and permittivity on the p

Журнал: Theoretical Foundations of Chemical Engineering

Выпуск журнала: Vol. 52, Is. 5

Номера страниц: 862-867

• Semenova O.V. (Siberian Fed Univ, Krasnoyarsk 660041, Russia)
• Railko M.Yu. (Siberian Fed Univ, Krasnoyarsk 660041, Russia)
• Patrusheva T.N. (Balt State Tech Univ Voenmekh, St Petersburg 190005, Russia)
• Merkushev F.F. (Siberian Fed Univ, Krasnoyarsk 660041, Russia)
• Podorozhyak S.A. (Siberian Fed Univ, Krasnoyarsk 660041, Russia)
• Yuzova V.A. (Siberian Fed Univ, Krasnoyarsk 660041, Russia)
• Korets A.Ya. (Siberian Fed Univ, Krasnoyarsk 660041, Russia)
• Khol'kin A.I. (Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia)

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