Electronic properties of Fe1-xVxBO3 at ambient conditions and at high pressure

Описание

Тип публикации: статья из журнала (материалы конференций, опубликованные в журналах)

Конференция: International Symposium on Physics of Solids Under High Pressure Using Nuclear Probes; Cologne, GERMANY; Cologne, GERMANY

Год издания: 2005

Идентификатор DOI: 10.1088/0953-8984/17/11/008

Аннотация: We present the results of an in-plane resistivity study of the solid solutions Fe1-xVxBO3. The measurements were made on single crystals with concentration x = 0.02, 0.13, 0.18, 0.3, 0.95, 1.0 in the temperature range 220-600 K. Semiconducting behaviour for samples with x >= 0.13 was found. Mott variable-range-hopping transport rhoПоказать полностью(T) = rho(0)exp(T*/T)(alpha) has been observed with alpha = 1/4 at T P-c(V) where p(c)(Fe) P-c(V) are the critical pressure values for FeBO3 and VBO3, respectively.

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Издание

Журнал: JOURNAL OF PHYSICS-CONDENSED MATTER

Выпуск журнала: Vol. 17, Is. 11

Номера страниц: 795-800

ISSN журнала: 09538984

Место издания: BRISTOL

Издатель: IOP PUBLISHING LTD

Персоны

  • Kazak N.V. (Kirensky Institute of Physics,Siberian Branch,Russian Academy of Sciences)
  • Ovchinnikov S.G. (Kirensky Institute of Physics,Siberian Branch,Russian Academy of Sciences)
  • Abd-Elmeguid M.M. (II Physikalisches Institut,Universitat zu Koeln)
  • Ivanova N.B. (Krasnoyarsk State Tech. University)