Bias-current and optically driven transport properties of the hybrid Fe/SiO2/p-Si structures

Описание

Тип публикации: статья из журнала (материалы конференций, опубликованные в журналах)

Год издания: 2012

Идентификатор DOI: 10.4028/www.scientific.net/SSP.190.526

Ключевые слова: Hybrid structure, Mis transition, Photoelectric effect, Schottky barrier, Critical currents, Interfaces (materials), Magnetic materials, Photoelectricity, Schottky barrier diodes, Silicon, Switching circuits, Bias currents, Critical currents, Ferromagnetic materials, Geometry, Interfaces (materials), Magnetic materials, Photoelectricity, Schottky barrier diodes, Semiconductor insulator boundaries, Switching circuits, Transport properties, Channel switching, Comparative analysis, Electron hole pairs, Fe films, Fe layer, Ferromagnetic films, Hybrid structure, Optical effects, Optical radiations, Photogeneration, Planar geometries, Schottky barriers, Semiconductor substrate, Temperature variation, Sensitive features, Transport properties, Magnetism

Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated Показать полностьюby a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO2 layer. © (2012) Trans Tech Publications.

Ссылки на полный текст

Издание

Журнал: (21 August 2011 through 25 August 2011, Moscow

Выпуск журнала: Vol. 190

Номера страниц: 526-529

Авторы

Вхождение в базы данных