Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures

Описание

Тип публикации: статья из журнала (материалы конференций, опубликованные в журналах)

Конференция: Moscow International Symposium on Magnetism (MISM); Lomonosov Moscow State Univ, Moscow, RUSSIA; Lomonosov Moscow State Univ, Moscow, RUSSIA

Год издания: 2015

Идентификатор DOI: 10.1016/j.jmmm.2014.11.014

Ключевые слова: Spintronics, Hybrid structures, Magnetoresistance, Magnetoimpedance, Photoinduced magnetoresistance, Hybrid structures, Magnetoimpedance, Magnetoresistance, Photoinduced magnetoresistance, Spintronics, Magnetic field effects, Magnetic fields, Magnetoelectronics, Magnetoresistance, Schottky barrier diodes, Applied magnetic fields, Back to back Schottky, Dc magnetoresistance, Hybrid structure, Magneto-impedance, Magnetotransport phenomena, Photo-induced, Voltage-controlled, Interface states

Аннотация: We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is founПоказать полностьюd to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz, Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface. (C) 2014 Elsevier B.V. All rights reserved.

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Издание

Журнал: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

Выпуск журнала: Vol. 383

Номера страниц: 69-72

ISSN журнала: 03048853

Место издания: AMSTERDAM

Издатель: ELSEVIER SCIENCE BV

Авторы

  • Volkov N.V. (Siberian Federal University)
  • Tarasov A.S. (Siberian Federal University)
  • Smolyakov D.A. (Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch)
  • Varnakov S.N. (Siberian State Aerospace University)
  • Ovchinnikov S.G. (Siberian Federal University)

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