Disorder- and correlation-induced charge carriers localization in oxyborate MgFeBO4, Mg0.5Co0.5FeBO4, CoFeBO4 single crystals

Описание

Тип публикации: статья из журнала

Год издания: 2015

Идентификатор DOI: 10.1016/j.jallcom.2015.04.056

Ключевые слова: Transition metal alloys and compounds, Disordered system, Semiconductors, Electrical transport, Disordered system, Electrical transport, Semiconductors, Transition metal alloys and compounds, Charge transfer, Chemical activation, Cobalt, Crystal atomic structure, Semiconductor materials, Single crystals, Temperature, Temperature distribution, Transition metal alloys, Transition metals, Activation mechanisms, Charge transfer mechanisms, Disordered system, Electrical transport, High temperature range, Mott variable-range hopping, Temperature dependence, Transition metal alloys and compounds, Activation energy

Аннотация: The temperature dependence of the resistivity of single crystalline Mg1-xCoxFeBO4 samples with x = 0.0, 0.5, 1.0 is investigated for the temperature range (210-400 K). The conduction was found to be governed by Mott variable-range hopping (VRH) in the low-temperature range (T = 210-270 K) and by thermo-activation mechanism in the hПоказать полностьюigh-temperature range (T = 280-400 K). Microscopic electronic parameters, such as the density of the localized states near the Fermi level, localization length, the hopping length, and the activation energy have been obtained. The change of the activation energy observed at high-temperature range was attributed to local structure distortions around Fe and Co atoms. The complicated behavior of charge transfer mechanisms is discussed based on two approaches: atomic disorder and electron correlations. (C) 2015 Elsevier B.V. All rights reserved.

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Издание

Журнал: JOURNAL OF ALLOYS AND COMPOUNDS

Выпуск журнала: Vol. 642

Номера страниц: 232-237

ISSN журнала: 09258388

Место издания: LAUSANNE

Издатель: ELSEVIER SCIENCE SA

Авторы

  • Knyazev Y.V. (Siberian Federal University)
  • Ivanova N.B. (Siberian Federal University)
  • Ovchinnikov S.G. (Siberian State Aerospace University)
  • Kazak N.V. (Laboratory of Physics of Magnetic Phenomena, Kirensky Institute of Physics, Siberian Branch of Russian Academy of Science (IP SB RAS))
  • Platunov M.S. (Laboratory of Physics of Magnetic Phenomena, Kirensky Institute of Physics, Siberian Branch of Russian Academy of Science (IP SB RAS))
  • Bezmaternykh L.N. (Laboratory of Physics of Magnetic Phenomena, Kirensky Institute of Physics, Siberian Branch of Russian Academy of Science (IP SB RAS))
  • Arauzo A. (Servicio de Medidas Fisicas, Universidad de Zaragoza)
  • Bartolome J. (Instituto de Ciencia de Materiales de Aragon, CSIC-Universidad de Zaragoza, Departamento de Fisica de la Materia Condensada)

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