The role of the semiconductor layer in the exchange-bias film structure of CoNi / Si / FeNi / Si with a spin spring effect

Описание

Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций

Конференция: 7th Euro-Asian Symposium on Trends in Magnetism, EASTMAG 2019

Год издания: 2019

Идентификатор DOI: 10.1088/1742-6596/1389/1/012028

Аннотация: CoNi / Si / FeNi / Si structures were synthesized by ion-plasma sputtering. A negative hysteresis loop bias was detected at the thickness of the silicon layer was less than 2 nm and the temperature was less than 100 K. A positive hysteresis loop bias was detected at the thickness of the silicon layer was more than 2 nm and the tempПоказать полностьюerature greater than 100K. © Published under licence by IOP Publishing Ltd.

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Издание

Журнал: Journal of Physics: Conference Series

Выпуск журнала: Vol. 1389, Is. 1

Номера страниц: 12028

ISSN журнала: 17426588

Издатель: Institute of Physics Publishing

Авторы

  • Kobyakov A.V. (Siberian Federal University, prospect Svobodny, 79, Krasnoyarsk, 660041, Russian Federation, L.V. Kirensky Institute of Physics of Siberian Branch of Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
  • Turpanov I.A. (L.V. Kirensky Institute of Physics of Siberian Branch of Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
  • Patrin G.S. (Siberian Federal University, prospect Svobodny, 79, Krasnoyarsk, 660041, Russian Federation, L.V. Kirensky Institute of Physics of Siberian Branch of Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
  • Yushkov V.I. (Siberian Federal University, prospect Svobodny, 79, Krasnoyarsk, 660041, Russian Federation, L.V. Kirensky Institute of Physics of Siberian Branch of Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
  • Yarikov S.A. (Siberian Federal University, prospect Svobodny, 79, Krasnoyarsk, 660041, Russian Federation, L.V. Kirensky Institute of Physics of Siberian Branch of Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
  • Volochaev M.N. (L.V. Kirensky Institute of Physics of Siberian Branch of Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
  • Zhivaya Y.A. (Siberian Federal University, prospect Svobodny, 79, Krasnoyarsk, 660041, Russian Federation)

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