Тип публикации: статья из журнала

Год издания: 2017

Идентификатор DOI: 10.1134/S1063782617110203

Аннотация: It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescencПоказать полностьюe spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer. © 2017, Pleiades Publishing, Ltd.

Журнал: Semiconductors

Выпуск журнала: Vol. 51, Is. 11

Номера страниц: 1513-1516

ISSN журнала: 10637826

Издатель: Maik Nauka-Interperiodica Publishing

• Nikiforov V.E. (Novosibirsk State University, Novosibirsk, Russian Federation)
• Abramkin D.S. (Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russian Federation, Novosibirsk State University, Novosibirsk, Russian Federation)
• Shamirzaev T.S. (Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russian Federation, Novosibirsk State University, Novosibirsk, Russian Federation, Ural Federal University, Yekaterinburg, Russian Federation)

• Scopus