Solid-state reactions in Ga/Mn thin films: Formation and magnetic properties of the I center dot-Ga7.7Mn2.3 phase

Описание

Тип публикации: статья из журнала

Год издания: 2010

Идентификатор DOI: 10.1134/S0021364010220108

Аннотация: Experimental results concerning the solid-state synthesis of the I center dot-Ga7.7Mn2.3 phase in Ga/Mn thin films are presented. A ferromagnetic (or ferrimagnetic) state is observed in the samples annealed at temperatures above 250A degrees C. The X-ray diffraction studies demonstrate the formation of the I center dot-Ga7.7Mn2.3 pПоказать полностьюhase, which is poly-crystalline being grown on glass substrates and exhibits the preferential cube-on-cube orientation on MgO(001) substrates. A strong dependence of the perpendicular anisotropy constant K (aSyen) and of the effective biaxial anisotropy constant K (1) (eff) on the magnetic field H has been found. Owing to such dependence, the easy axis of magnetization lying in the plane of the film changes its direction approaching the film normal when the increasing magnetic field exceeds 8 kOe. The anomalous behavior of K (aSyen) and K (1) (eff) constants is explained both by the in-plane stresses arising in the course of the formation of the I center dot-Ga7.7Mn2.3 phase and by the direct dependence of magnetostriction constants on the magnetic field. For the I center dot-Ga7.7Mn2.3 phase, the saturation magnetization M (S) has been determined and the first magnetocrystalline anisotropy constant K (1) has been estimated.

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Издание

Журнал: JETP LETTERS

Выпуск журнала: Vol. 92, Is. 10

Номера страниц: 687-691

ISSN журнала: 00213640

Место издания: NEW YORK

Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER

Авторы

  • Myagkov V.G. (Reshetnev Siberian State Aerospace University)
  • Zhigalov V.S. (Reshetnev Siberian State Aerospace University)
  • Bykova L.E. (Kirensky Institute of Physics,Siberian Branch,Russian Academy of Sciences)
  • Patrin G.S. (Siberian Federal University)
  • Velikanov D.A. (Siberian Federal University)
  • Solov'ev L.A. (Institute of Chemistry and Chemical Technology,Siberian Branch,Russian Academy of Sciences)

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