Temperature-dependent photoconductance and optical properties of In2O3 thin films prepared by autowave oxidation : научное издание

Описание

Тип публикации: статья из журнала

Год издания: 2017

Идентификатор DOI: 10.17516/1997-1397-2017-10-4-399-409

Ключевые слова: Autowave oxidation, In2O3 thin films, Photoconductance

Аннотация: The influences of ultraviolet (UV) irradiation and temperature on the electrical and optical properties in In2O3 films obtained by autowave oxidation were measured experimentally. The film resistance changed slightly for temperatures from 300 to 95 K, and more noticeably when the temperature was further de- creased, measured in theПоказать полностьюdark. Under UV irradiation, the resistivity of the films at room temperature decreased sharply by ~25% and from 300 to 95 K, and continued to decrease by ~38% with a further decreasing temperature. When the UV source was turned off, the resistivity relaxed at a rate of 15 Ω/s for the first 30 seconds and 7 Ω/s for the remaining time. The transmittance decreased by 3.1% at a wavelength of 6.3 µm after the irradiation ceased. The velocity of the relaxation transmittance was 0.006 %/s. The relaxation of the electrical resistance and transmittance after UV irradiation termination were similar. It was assumed that the dominant mechanism responsible for the change in the conductivity in the indium oxide films during UV irradiation was photoreduction. © Siberian Federal University. All rights reserved.

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Издание

Журнал: Journal of Siberian Federal University - Mathematics and Physics

Выпуск журнала: Vol. 10, Is. 4

Номера страниц: 399-409

ISSN журнала: 19971397

Издатель: Siberian Federal University

Персоны

  • Tambasov I.A. (Kirensky Institute of Physics SB RAS, Akademgorodok, 50/38, Krasnoyarsk, Russian Federation)
  • Maygkov V.G. (Kirensky Institute of Physics SB RAS, Akademgorodok, 50/38, Krasnoyarsk, Russian Federation)
  • Ivanenko A.A. (Kirensky Institute of Physics SB RAS, Akademgorodok, 50/38, Krasnoyarsk, Russian Federation)
  • Volochaev M.N. (Kirensky Institute of Physics SB RAS, Akademgorodok, 50/38, Krasnoyarsk, Russian Federation)
  • Voronin A.S. (Krasnoyarsk Scientific Center SB RAS, Akademgorodok 50, Krasnoyarsk, Russian Federation)
  • Ivanchenko F.S. (Siberian Federal University, Svobodny 79, Krasnoyarsk, Russian Federation)
  • Tambasova E.V. (Reshetnev Siberian State Aerospace University, Krasnoyarskii Rabochii, 31, Krasnoyarsk, Russian Federation)

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