Тип публикации: статья из журнала

Год издания: 2020

Идентификатор DOI: 10.1016/j.apsusc.2020.146736

Ключевые слова: Annealing, Epitaxial films, Fe3Si, MD simulation, Sputtering, Atoms, Buffer layers, Deposition rates, Iron, Iron compounds, Molecular dynamics, Silicides, Silicon, Substrates, Silicon substrates, Silicon surfaces, Stoichiometric compositions, Structure formations, Substrate temperature, Temperature growth, Temperature increase, Theoretical modeling, Crystal atomic structure

Журнал: Applied Surface Science

Выпуск журнала: Vol. 527

Номера страниц: 146736

ISSN журнала: 11694332

Издатель: Elsevier B.V.

• Chepkasov I.V (Skolkovo Inst Sci & Technol, 30,Bld 1 Bolshoy Blvd, Moscow 121205, Russia; Katanov Khakas State Univ, 90 Lenin Pr, Abakan 655017, Russia)
• Baidyshev V.S. (Katanov Khakas State Univ, 90 Lenin Pr, Abakan 655017, Russia)
• Sukhanova E.V (Natl Res Univ, Moscow Inst Phys & Technol, 9 Inst Skiy Per, Dolgoprudnyi 141701, Moscow Region, Russia; RAS, Emanuel Inst Biochem Phys, Moscow 199339, Russia)
• Visotin M.A. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, 50-38 Akademgorodok, Krasnoyarsk 660036, Russia; Siberian Fed Univ, 79 Svobodny Pr, Krasnoyarsk 660041, Russia)
• Sule P. (EK MFA, Dept Nanostruct, Budapest, Hungary)
• Popov Z.I (RAS, Emanuel Inst Biochem Phys, Moscow 199339, Russia; Natl Univ Sci & Technol MiSiS, 4 Leninskiy Pr, Moscow 119049, Russia; Plekhanov Russian Univ Econ, 36 Stremyanny Per, Moscow 199339, Russia)

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