Тип публикации: статья из журнала

Год издания: 2019

Идентификатор DOI: 10.1002/adom.201900139

Ключевые слова: band structure, Cs 2 SnBr 6, Cs 2 SnCl 6, lead-free perovskite derivatives, narrowband photodetection

Аннотация: Lead-free and stable Sn halide perovskites demonstrate tremendous potential in the field of optoelectronic devices. Here, the structure and optical properties of the “defect” perovskites Cs 2 SnCl 6? x Br x are reported, as well as their use as photodetec

Журнал: Advanced Optical Materials

Номера страниц: 1900139

ISSN журнала: 21951071

Издатель: Wiley-VCH Verlag

• Zhou J. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
• Luo J. (Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China)
• Rong X. (Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and )
• Wei P. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
• Molokeev M.S. (Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Department of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk, 66)
• Huang Y. (Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and)
• Zhao J. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
• Liu Q. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
• Zhang X. (Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China)
• Tang J. (Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China)
• Xia Z. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China, State Key Laboratory of Luminescent Materials and D)

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