Porous Silicon Capacitor Structures with Embedded Barium Strontium Titanates

Описание

Тип публикации: статья из журнала

Год издания: 2020

Идентификатор DOI: 10.1134/S0040579520050218

Ключевые слова: electrochemical processing, extraction-pyrolytic method, ferroelectric, heterostructures on porous silicon with barium strontium titanate, porous structures on silicon

Аннотация: Abstract: The possibility of creating capacitor structures based on porous silicon with oxide ferroelectrics embedded in the pores—barium strontium titanates, which have a diffuse phase transition—is considered. In this case, thin films of barium strontium titanate are characterized as nanostructures with ferroelectric properties. Показать полностьюTo obtain such structures, the extraction-pyrolytic method is used. The dependences of the capacitance and permittivity of the structures on the ratio of barium and strontium components in barium strontium titanates are studied. The results of this work confirm the possibility of using the presented technologies—the production of porous silicon matrices and the extraction-pyrolytic method for producing a ferroelectric based on barium and strontium titanates—to create a capacitive-type structures with different dielectric characteristics due to the possibility of varying the obtained ferroelectric composition, dimension, and morphology of the porous silicon matrix. © 2020, Pleiades Publishing, Ltd.

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Издание

Журнал: Theoretical Foundations of Chemical Engineering

Выпуск журнала: Vol. 54, Is. 5

Номера страниц: 1014-1019

ISSN журнала: 00405795

Издатель: Pleiades journals

Авторы

  • Semenova O.V. (Siberian Fed Univ, Krasnoyarsk 660074, Russia)
  • Patrusheva T.N. (Baltic State Tech Univ, St Petersburg 190005, Russia)
  • Podorozhnyak S.A. (Siberian Fed Univ, Krasnoyarsk 660074, Russia)
  • Yuzova V.A. (Siberian Fed Univ, Krasnoyarsk 660074, Russia)
  • Korets A.Ya. (Siberian Fed Univ, Krasnoyarsk 660074, Russia)
  • Kholkin A.I. (Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia)
  • Railko M.Yu. (Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia)

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