Тип публикации: статья из журнала

Год издания: 2015

Идентификатор DOI: 10.1016/j.physb.2015.08.054

Ключевые слова: Indium oxide, Fe-In2O3 thin films, Weak localization, Disordered semiconductors, Fe-In<inf>2</inf>O<inf>3</inf> thin films, Carrier concentration, Hall mobility, Magnetoresistance, Nanocomposite films, Nanocomposites, Oxide films, Hall carrier concentrations, Magneto transport properties, Nanocomposite thin films, Negative magneto-resistance, Thermite reaction, Thin films

Аннотация: A ferromagnetic Fe-In2O3 nanocomposite thin film has been synthesized by the thermite reaction Fe2O3 + In -> Fe-In2O3. Measurements of the Hall carrier concentration, Hall mobility and magnetoresistance have been conducted at room temperature. The nanocomposite Fe-In2O3 thin film had n=1.94.10(20) cm(-3), mu = 6.45 cm(2)/Vs and negПоказать полностьюative magnetoresistance. The magnetoresistance for 8.8 kOe was similar to -0.22%.The negative magnetoresistance was well described by the weak localization and model proposed by Khosla and Fischer. (C) 2015 Elsevier B.V. All rights reserved.

Журнал: PHYSICA B-CONDENSED MATTER

Выпуск журнала: Vol. 478

Номера страниц: 135-137

ISSN журнала: 09214526

Место издания: AMSTERDAM

Издатель: ELSEVIER SCIENCE BV

• Tambasov I.A. (Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences)
• Myagkov V.G. (Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences)
• Bykova L.E. (Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences)
• Zhigalov V.S. (Reshetnev Siberian State Aerospace University)
• Matsynin A.A. (Siberian Federal University)
• Gornakov K.O. (Reshetnev Siberian State Aerospace University)
• Yozhikova E.V. (Reshetnev Siberian State Aerospace University)

• Web of Science Core Collection
• Scopus
• Ядро РИНЦ (eLIBRARY.RU)