Тип публикации: статья из журнала

Год издания: 2015

Идентификатор DOI: 10.1134/S1063776115010045

Ключевые слова: Organic polymers, Semiconductor insulator boundaries, Function of pressure, High pressure, High spins, Hubbard, Insulator metal transition, Mott insulators, Pressure increase, Spin crossovers, Metal insulator transition

Аннотация: For Mott insulators with tetrahedral environment, the effective Hubbard parameter U (eff) is obtained as a function of pressure. This function is not universal. For crystals with d (5) configuration, the spin crossover suppresses electron correlations, while for d (4) configurations, the parameter U (eff) increases after a spin croПоказать полностьюssover. For d (2) and d (7) configurations, U (eff) increases with pressure in the high-spin (HS) state and is saturated after the spin crossover. Characteristic features of the insulator-metal transition are considered as pressure increases; it is shown that there may exist cascades of several transitions for various configurations.

Журнал: JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS

Выпуск журнала: Vol. 120, Is. 1

Номера страниц: 132-138

ISSN журнала: 10637761

Место издания: NEW YORK

Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER

• Lobach K.A. (Siberian Federal University)
• Ovchinnikov S.G. (Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences)
• Ovchinnikova T.M. (Sukachev Institute of Forest, Siberian Branch, Russian Academy of Sciences)

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• Scopus
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