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Formation of structural defects in CdTe and CdZnTe heteroepitaxial layers grown on GaAs

Описание

Тип публикации: статья из журнала

Год издания: 1996

Аннотация: The formation of structural defects in the epitaxial systems {111}CdTe/{001}GaAs, {111}CdTe/ {111}GaAs, {001}CdTe/{001}GaAs, and {001}HgMnTe/{00l}CdTe/{001}jGaAs grown by metal-organic vapor-phase epitaxy and in a {001}GdZnTe/{001}CdZnTe/{001}GaAs superlattice grown by molecular-beam epitaxy is investigated by transmission and highПоказать полностью-resolution electron microscopy. © 1996 American Institute of Physics. [S1063-7834(96)01502-7].

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Издание

Журнал: Physics of the Solid State

Выпуск журнала: Vol. 38, Is. 2

Номера страниц: 272-277

Персоны

  • Loginov Yu.Yu. (Krasnoyarsk State University, 660000 Krasnoyarsk, Russian Federation)
  • Brown P.D. (Krasnoyarsk State University, 660000 Krasnoyarsk, Russian Federation)
  • Humphreys C.J. (Krasnoyarsk State University, 660000 Krasnoyarsk, Russian Federation)

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