Magnetically driven high-frequency rectification in a cooperative system of magnetic tunnel junctions: Frequency dependence

Описание

Тип публикации: статья из журнала

Год издания: 2011

Идентификатор DOI: 10.1016/j.jmmm.2010.11.096

Ключевые слова: Magnetic tunnel junction, High-frequency rectification, Spintronics, Absorption lines, Conducting grains, Cooperative systems, Different frequency, Frequency dependence, High frequency HF, Magnetic field dependences, Microwave radiations, Polycrystalline, Radiation frequencies, Ramified network, Rectification effects, Rectified voltage, Spin-polarized currents, Electric rectifiers, Magnetic devices, Magnetic fields, Magnetic resonance, Manganese oxide, Nanotechnology, Tunnel junctions

Аннотация: The effect of magnetically driven high-frequency rectification in a polycrystalline La0.7Ca0.3MnO3 manganite has been measured at different frequencies of microwave radiation. The magnetic field dependence of a rectified voltage has a broad peak resembling an absorption line, whose shape and position are determined by the radiationПоказать полностьюfrequency. The rectification effect in a polycrystalline manganite sample is related to a ramified network of magnetic tunnel junctions, which is formed by ferromagnetic conducting grains with insulator boundaries. The results of measurements are consistent with a model for the magneto-dependent rectification effect based on the interplay between a spin-polarized current through the tunnel junctions and magnetic resonance induced in the grains forming the junctions. (C) 2010 Elsevier B.V. All rights reserved.

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Издание

Журнал: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

Выпуск журнала: Vol. 323, Is. 7

Номера страниц: 1001-1005

ISSN журнала: 03048853

Место издания: AMSTERDAM

Издатель: ELSEVIER SCIENCE BV

Персоны

  • Volkov N.V. (Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia)
  • Eremin E.V. (Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia; Siberian State Aerosp Univ, Inst Space Technol, Krasnoyarsk 660014, Russia)
  • Rauckii M.V. (Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia)
  • Shaikhutdinov K.A. (Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia)
  • Petrov M.I. (Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia; Siberian State Aerosp Univ, Inst Space Technol, Krasnoyarsk 660014, Russia)
  • Leksikov An.A. (Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia)