Magnetic and magnetoresistance properties of (Co/Ge)n films


Тип публикации: статья из журнала (материалы конференций, опубликованные в журналах)

Конференция: Moscow International Symposium on Magnetism, MISM 2014; Moscow, Russian Federation; Moscow, Russian Federation

Год издания: 2015

Идентификатор DOI: 10.4028/

Ключевые слова: Bilayer structure magnetization, Cobalt, Coercivity, Ferromagnetic metal/semiconductor films, Germanium interface, Magnetoresistance, Schottky barrier, Coercive force, Ferromagnetic materials, Ferromagnetism, Germanium, Interfaces (materials), Magnetism, Schottky barrier diodes, Bi-layer structure, Face centered cubic phase, Ferromagnetic orderings, Magnetic and electrical properties, Magnetic behavior, Magneto-resistive effect, Magnetoresistance properties, Schottky barriers

Аннотация: The magnetic and electrical properties of (Co/Ge)n films are experimentally studied. It is established that at the Co/Ge interface an intermediate magnetic layer forms. Two phases of cobalt, one is a face-centered cubic phase and the other is presumably a Co–Ge alloy with a weakly ferromagnetic order, have been found to exist. A “dПоказать полностьюead” layer no more than 2 nm in thickness is formed at the interface. This layer affects the magnetic behavior and magnetoresistive effect in the investigated structures. © (2015) Trans Tech Publications, Switzerland.

Ссылки на полный текст


Журнал: Solid State Phenomena

Выпуск журнала: Vol. 233-234

Номера страниц: 423-426


  • Patrin G. (Siberian Federal University)
  • Turpanov I. (L.V. Kirensky Institute of Physics, Siberian Branch of Russian Aсademy of Sciences)
  • Maruschenko E. (Siberian Federal University)
  • Patrin K. (Siberian Federal University)
  • Kobyakov A. (Siberian Federal University)
  • Maltsev V. (L.V. Kirensky Institute of Physics, Siberian Branch of Russian Aсademy of Sciences)
  • Yushkov V. (Siberian Federal University)
  • Patrin G.

Вхождение в базы данных