Тип публикации: статья из журнала

Год издания: 2013

Идентификатор DOI: 10.1134/S0021364013110088

Аннотация: The energy of the sorption and diffusion of lithium atoms on the reconstructed (4 x 2) (100) silicon surface in the process of their transport into near-surface layers, as well as inside crystalline silicon, at various lithium concentrations have been investigated within the density functional theory. It has been shown that single Показать полностьюlithium atoms easily migrate on the (100) surface and gradually fill the surface states (T3 and L) located in channels between silicon dimers. The diffusion of lithium into near-surface silicon layers is hampered because of high potential barriers of the transition (1.22 eV). The dependences of the binding energy, potential barriers, and diffusion coefficient inside silicon on distances to the nearest lithium atoms have also been examined. It has been shown that an increase in the concentration of lithium to the Li0.5Si composition significantly reduces the transition energy (from 0.90 to 0.36 eV) and strongly increases (by one to three orders of magnitude) the lithium diffusion rate.

Журнал: JETP LETTERS

Выпуск журнала: Vol. 97, Is. 11

Номера страниц: 634-638

ISSN журнала: 00213640

Место издания: NEW YORK

Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER

• Kuzubov A.A. (Kirensky Institute of Physics, Siberian Branch,Russian Academy of Sciences)
• Eliseeva N.S. (Siberian State Aerospace University)
• Popov Z.I. (Siberian State Aerospace University)
• Denisov V.M. (Siberian Federal University)
• Fedorov A.S. (Siberian State Aerospace University)
• Tomilin F.N. (Kirensky Institute of Physics, Siberian Branch,Russian Academy of Sciences)
• Serzhantova M.V. (Siberian State Aerospace University)

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