Тип публикации: статья из журнала
Год издания: 2014
Идентификатор DOI: 10.1103/PhysRevB.90.125431
Аннотация: The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the ?- and X-conduction-band valleys, for which their spinsПоказать полностьюmay be oriented by resonant spin-flip Raman scattering. This access is used to study the exciton spin-level structure by accurately measuring the anisotropic hole and isotropic electron g factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of ?-X-valley mixing, as evidenced by both experiment and theory. © 2014 American Physical Society.
Журнал: Physical Review B - Condensed Matter and Materials Physics
Выпуск журнала: Vol. 90, Is. 12