Spin-flip Raman scattering of the ?-X mixed exciton in indirect band gap (In,Al)As/AlAs quantum dots

Описание

Тип публикации: статья из журнала

Год издания: 2014

Идентификатор DOI: 10.1103/PhysRevB.90.125431

Аннотация: The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the ?- and X-conduction-band valleys, for which their spinsПоказать полностьюmay be oriented by resonant spin-flip Raman scattering. This access is used to study the exciton spin-level structure by accurately measuring the anisotropic hole and isotropic electron g factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of ?-X-valley mixing, as evidenced by both experiment and theory. © 2014 American Physical Society.

Ссылки на полный текст

Издание

Журнал: Physical Review B - Condensed Matter and Materials Physics

Выпуск журнала: Vol. 90, Is. 12

Персоны

  • Debus J. (Experimentelle Physik 2, Technische Universit?t Dortmund, Dortmund, Germany)
  • Shamirzaev T.S. (Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russian Federation, Ural Federal University, Ekaterinburg, Russian Federation)
  • Dunker D. (Experimentelle Physik 2, Technische Universit?t Dortmund, Dortmund, Germany)
  • Sapega V.F. (Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russian Federation, Spin Optics Laboratory, St. Petersburg State University, St. Petersburg, Russian Federation)
  • Ivchenko E.L. (Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russian Federation)
  • Yakovlev D.R. (Experimentelle Physik 2, Technische Universit?t Dortmund, Dortmund, Germany, Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russian Federation)
  • Toropov A.I. (Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russian Federation)
  • Bayer M. (Experimentelle Physik 2, Technische Universit?t Dortmund, Dortmund, Germany, Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russian Federation)

Вхождение в базы данных