Тип публикации: статья из журнала (материалы конференций, опубликованные в журналах)

Конференция: Institute-of-Physics Electron-Microscopy-and-Analysis-Group Conference; UNIV BIRMINGHAM, BIRMINGHAM, ENGLAND; UNIV BIRMINGHAM, BIRMINGHAM, ENGLAND

Год издания: 1995

Аннотация: The artefact structures remnant within electron transparent semiconductor foils arising from ion beam milling procedures are illustrated and recipes for their inhibition or removal given. Although iodine reactive ion sputtering is effective for the removal of argon ion induced extrinsic dislocation loops from the surfaces of low stПоказать полностьюacking fault energy II-VI compounds and indium surface particles from (In,Ga)(As,P)-based compounds, iodine is found to be retained within weakly bonded semiconductors.

Журнал: ELECTRON MICROSCOPY AND ANALYSIS 1995

Выпуск журнала: Vol. 147

Номера страниц: 393-396

ISSN журнала: 09513248

Место издания: BRISTOL

Издатель: IOP PUBLISHING LTD

• Brown P.D. (KRASNOYARSK STATE UNIV)
• Loginov Y.Y. (KRASNOYARSK STATE UNIV)
• Boothroyd C.B. (KRASNOYARSK STATE UNIV)
• Humphreys C.J. (KRASNOYARSK STATE UNIV)

• Web of Science Core Collection