Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций
Конференция: International Scientific Conference Reshetnev Readings; Krasnoyarsk, RUSSIA; Krasnoyarsk, RUSSIA
Год издания: 2019
Идентификатор DOI: 10.1088/1757-899X/467/1/012007
Ключевые слова: Electron irradiation, II-VI semiconductors, Transmission electron microscopy, Dislocation loop, Interstitial atoms, Irradiation time, Structural defect, Cadmium telluride
Аннотация: We have conducted the formation of interstitial atoms and vacancies and made their clusters in the form of dislocation loops and voids in cadmium telluride under irradiation by electrons. We have calculated dependences of the radii of dislocation loops an
Журнал: IOP Conference Series: Materials Science and Engineering
Выпуск журнала: Vol. 467, Is. 1
Номера страниц: 12007
ISSN журнала: 17578981
Издатель: Institute of Physics Publishing