Тип публикации: статья из журнала

Год издания: 2022

Идентификатор DOI: 10.1007/s11182-022-02633-1

Ключевые слова: bandpass filter, coupling coefficient, dielectric substrate, equivalent circuit, microstrip resonator

Аннотация: A comparison is made of the characteristics of bandpass filters consisting of two interacting resonators, which are either half-wave or quarter-wave segments of microstrip transmission lines with the same widths of strip conductors. Plates with a thickness of 0.5 mm made of TBNS high-frequency ceramics with a relative permittivity Показать полностьюε = 80 were used as substrates for microstrip structures. The structures having a maximum coupling region of the resonators and the maximum value of their coupling to external ports with a wave impedance of 50 Ω were studied. The filters were tuned by selecting the gap between the strip conductors so that the maximum reflection level in the passband was equal to –20 dB. Electromagnetic simulation of 3D models showed that the fractional bandwidth of filters based on quarter-wave resonators is almost 2 times wider than the bandwidth of filters based on half-wave resonators, and this fact is confirmed by the measurement results. The discovered effect is explained by twice the characteristic impedance of a quarter-wave resonator relative to a half-wave one. © 2022, Springer Science+Business Media, LLC, part of Springer Nature.

Журнал: Russian Physics Journal

Выпуск журнала: Vol. 65, Is. 2

Номера страниц: 276-286

ISSN журнала: 10648887

Издатель: Springer

• Belyaev B.A. (Siberian State University of Science and Technology named after academician M. F. Reshetnev, Krasnoyarsk, Russian Federation, Siberian Federal University, Krasnoyarsk, Russian Federation, Kirensky Institute of Physics, Federal Research Center KSC of the Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, Russian Federation)
• Balva Y.F. (Kirensky Institute of Physics, Federal Research Center KSC of the Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, Russian Federation)
• Leksikov A.A. (Kirensky Institute of Physics, Federal Research Center KSC of the Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, Russian Federation)
• Serzhantov A.M. (Siberian State University of Science and Technology named after academician M. F. Reshetnev, Krasnoyarsk, Russian Federation, Siberian Federal University, Krasnoyarsk, Russian Federation)
• Khodenkov S.A. (Siberian State University of Science and Technology named after academician M. F. Reshetnev, Krasnoyarsk, Russian Federation)
• Shumilov T.Y. (Siberian Federal University, Krasnoyarsk, Russian Federation, Kirensky Institute of Physics, Federal Research Center KSC of the Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, Russian Federation)

• Scopus