Тип публикации: статья из журнала

Год издания: 2025

Идентификатор DOI: 10.1002/adom.202402889

Аннотация: <jats:title>Abstract</jats:title><jats:p>Incorporation of phase-change materials (PCM) into nanophotonic structures is a straightforward method for making them tunable. The binary semiconducting chalcogenide antimony trisulfide (Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub>) is a suitable PCM for nanophotonic applications in the Показать полностьюnear-infrared (NIR) owing to its high refractive index, low optical losses, and wide bandgap. Therefore, in this study, Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> Tamm plasmon polaritons (TPPs) are fabricated with a focus on their widespread use in nanophotonic applications. For this, a gold film and Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> are deposited on the distributed Bragg reflector through e-beam evaporation. TPPs are excited at the interface between the distributed Bragg reflector (DBR) and the metal layer. The refractive index, extinction coefficient, and high-Q reflectance spectra of the developed Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> are measured and analyzed. The Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> TPPs exhibit a resonance shift of 45 nm caused by the phase change of Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> from amorphous to crystalline. In addition, the angle-dependent resonance shifts of 85, 76, and 63 nm are achieved by unpolarized, transverse magnetic (TM), and transverse electric (TE) modes near NIR light, respectively. The developed Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> TPP can be applied in various nanophotonics applications, including optical memory, optical data storage, and LiDAR receiver systems.</jats:p>

Журнал: Advanced Optical Materials

Выпуск журнала: Т. 13, № 9

ISSN журнала: 21951071

• Ye Ming-Jyun (Research Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) Tsukuba Japan)
• Bikbaev Rashid G. (Institute of Engineering Physics and Radio Electronics Siberian Federal University Krasnoyarsk 660041 Russia)
• Pankin Pavel S. (Institute of Engineering Physics and Radio Electronics Siberian Federal University Krasnoyarsk 660041 Russia)
• Chen Lu-Hsing (Institute of Photonics Technologies National Tsing Hua University Hsinchu Taiwan)
• Chiu David (International Intercollegiate Ph.D. Program National Tsing Hua University Hsinchu 300044 Taiwan)
• Timofeev Ivan V. (Institute of Engineering Physics and Radio Electronics Siberian Federal University Krasnoyarsk 660041 Russia)
• Chen Hung-Wen (Institute of Photonics Technologies National Tsing Hua University Hsinchu Taiwan)
• Ishii Satoshi (Research Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) Tsukuba Japan)
• Chen Kuo-Ping (Institute of Photonics Technologies National Tsing Hua University Hsinchu Taiwan)

• Ядро РИНЦ (eLIBRARY.RU)