Тип публикации: статья из журнала

Год издания: 2020

Идентификатор DOI: 10.1002/adom.202001856

Ключевые слова: crystal growth, first principles calculations, inorganic functional materials, laser damage threshold, second harmonic generation

Аннотация: Mid-infrared (mid-IR) nonlinear optical (NLO) crystals are indispensable for the mid-IR lasers generation with tunable wavelengths from 3 to 20 µm. AgGaSe2 is a commercial mid-IR NLO crystal with the highest figures of merit, but suffers low laser damage threshold (LDT). To achieve the balance of optical transmission, NLO effect, aПоказать полностьюnd LDT, it is proposed to molecularly modify the AgGaSe2 structure by introducing the [LiSe4] tetrahedra, and successfully grow large crystals of a new selenide AgLiGa2Se4. The replacement of half of the heavy Ag+ cations with light Li+ increases the band gap to 2.2 eV (vs. 1.7 eV in AgGaSe2). The LDT value in AgLiGa2Se4 increases five times compared to that in AgGaSe2, while keeping a relatively large NLO susceptibility of 26 pm V−1. Moreover, the thermal expansion coefficients in AgLiGa2Se4 are approximately two times lower in absolute value compared with AgGaSe2, which is beneficial to the large crystal growth. All these advantages would make AgLiGa2Se4 a new promising NLO crystal for mid-IR laser applications. © 2020 Wiley-VCH GmbH

Журнал: Advanced Optical Materials

ISSN журнала: 21951071

Издатель: Wiley-VCH Verlag

• Yelisseyev A. (Laboratory of Lithospheric Mantle and Diamond Deposits, Laboratory of Crystal Growth, Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk, 630090, Russian Federation, Department of Physics Laboratory of Functional materials, Novosibirsk State University, Novosibirsk, 630090, Russian Federation)
• Lobanov S. (Laboratory of Lithospheric Mantle and Diamond Deposits, Laboratory of Crystal Growth, Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk, 630090, Russian Federation, Department of Physics Laboratory of Functional materials, Novosibirsk State University, Novosibirsk, 630090, Russian Federation)
• Molokeev M. (Laboratory of Crystal Physics, Kirensky Institute of Physics SB RAS, Krasnoyarsk, 660036, Russian Federation, Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021, Russian Federation, Department of Engineering Physics and Radioelectronic, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
• Zhang S. (Technical Institute of Physics and Chemistry CAS, Beijing, 100190, China, University of Chinese Academy of Sciences, Beijing, 100190, China)
• Pugachev A. (Laboratory of Condensed Matter Spectroscopy, Institute of Automation and Electrometry SB RAS, Novosibirsk, 630090, Russian Federation)
• Lin Z. (Technical Institute of Physics and Chemistry CAS, Beijing, 100190, China, University of Chinese Academy of Sciences, Beijing, 100190, China)
• Vedenyapin V. (Laboratory of Lithospheric Mantle and Diamond Deposits, Laboratory of Crystal Growth, Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk, 630090, Russian Federation, Department of Physics Laboratory of Functional materials, Novosibirsk State University, Novosibirsk, 630090, Russian Federation)
• Kurus A. (Laboratory of Lithospheric Mantle and Diamond Deposits, Laboratory of Crystal Growth, Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk, 630090, Russian Federation, Department of Physics Laboratory of Functional materials, Novosibirsk State University, Novosibirsk, 630090, Russian Federation)
• Khamoyam A. (Laboratory of Lithospheric Mantle and Diamond Deposits, Laboratory of Crystal Growth, Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk, 630090, Russian Federation, Department of Physics Laboratory of Functional materials, Novosibirsk State University, Novosibirsk, 630090, Russian Federation)
• Isaenko L. (Laboratory of Lithospheric Mantle and Diamond Deposits, Laboratory of Crystal Growth, Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk, 630090, Russian Federation, Department of Physics Laboratory of Functional materials, Novosibirsk State University, Novosibirsk, 630090, Russian Federation)

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