Тип публикации: статья из журнала
Год издания: 1993
Ключевые слова: Boron compounds, Contacts (fluid mechanics), Crystal growth, Fluxes, Molten materials, Oxides, Semiconductor growth, Surface phenomena, Temperature control, Monocrystals, Semiconductor materials
Аннотация: Different characters of borax and boron oxide melts interaction with GaAs, InAs, Zn, Se, CdS and Si semiconductor surface has been revealed. Thus, for stationary wetting angle values are established practically after borax melting, but in the case of boron oxide it takes 0.5-6 hours, that depends on temperature. With the temperaturПоказать полностьюe growth semiconductor wetting with boron oxide continually improves, in contrast to borox. A conclusion has been made, that borox is not advantageous to be used as a sealing flux, when preparing the first four semiconductor monocrystals.
Журнал: Rasplavy
Выпуск журнала: Is. 3
Номера страниц: 94-96