Magnetic and Resonance Properties of a Low-Dimensional Cobalt–Aluminum Oxide–Germanium Film Tunnel Junction Deposited by Magnetron Sputtering

Описание

Тип публикации: статья из журнала

Год издания: 2022

Идентификатор DOI: 10.3390/magnetochemistry8100130

Ключевые слова: aluminum oxides, anisotropy tunnel contact, ferromagnetic film

Аннотация: The temperature behavior of saturation magnetization and the temperature behavior of the integral signal intensity in electron magnetic resonance spectra is experimentally studied comprehensively using a low-dimensional Al2O3/Ge/Al2O3/Co (aluminum oxide–cobalt–aluminum oxide–germanium) tunnel junction with different deposition veloПоказать полностьюcities of a ferromagnetic metal (Co) thin layer and non-magnetic layers (Al2O3/Ge/Al2O3). The cobalt ferromagnetic layer was deposited on aluminum oxide in two ways: in one cycle of creating the structure and with atmospheric injection before deposition of the cobalt layer. The thermomagnetic curves revealed the appearance of minima observed at low temperatures on both sides of the cobalt layer. Possible sources of precession perturbations at low temperatures can be explained by: the influence of the Al2O3 layer structure on the Al2O3/Co interface; residual gases in the working chamber atmosphere and finely dispersed cobalt pellets distributed over the cobalt film thickness. The work offers information of great significance in terms of practical application, for both fundamental physics and potential applications of ultrathin films. © 2022 by the authors.

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Издание

Журнал: Magnetochemistry

Выпуск журнала: Vol. 8, Is. 10

Номера страниц: 130

ISSN журнала: 23127481

Издатель: MDPI

Персоны

  • Kobyakov A.V. (Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation, Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660041, Russian Federation)
  • Patrin G.S. (Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation, Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660041, Russian Federation)
  • Yushkov V.I. (Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation, Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660041, Russian Federation)
  • Shiyan Y.G. (Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation, Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660041, Russian Federation)
  • Rudenko R.Y. (Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Kosyrev N.N. (Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660041, Russian Federation, Achinsk Branch of Krasnoyarsk State Agrarian University, Achinsk, 662155, Russian Federation)
  • Zharkov S.M. (Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation, Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660041, Russian Federation)

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