Effect of the Structural Properties on the Electrical Resistivity of the Al/Ag Thin Films during the Solid-State Reaction : научное издание


Тип публикации: статья из журнала

Год издания: 2020

Идентификатор DOI: 10.1134/S1063783420040034

Ключевые слова: Al/Ag, electron diffraction, phase formation, resistivity, solid-state reaction, thin films

Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-stateПоказать полностьюreaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted. © 2020, Pleiades Publishing, Ltd.

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Журнал: Physics of the Solid State

Выпуск журнала: Vol. 62, Is. 4

Номера страниц: 708-713

ISSN журнала: 10637834

Издатель: Pleiades Publishing


  • Altunin R.R. (Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Moiseenko E.T. (Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Zharkov S.M. (Siberian Federal University, Krasnoyarsk, 660041, Russian Federation, Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)

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