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Theoretical study of the thermodynamic stability and electronic structure of thin films of 3C, 2H, and 2D silicon carbides

Описание

Тип публикации: статья из журнала

Год издания: 2014

Идентификатор DOI: 10.1134/S1063783414080150

Аннотация: Silicon carbide is among the most common materials used in semiconductor engineering. Silicon carbide thin films are attractive from the standpoint of designing devices based on heterojunctions. This is due to a characteristic feature of this compound, such as polytypism, leading to the difference in the physical properties and alsПоказать полностьюo hampering the preparation of high-quality material samples. In this work, the thermodynamic stability and electronic structure of thin films based on the polytypes 3C, 2H, and 2D with a thickness of a few nanometers have been studied.

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Издание

Журнал: PHYSICS OF THE SOLID STATE

Выпуск журнала: Vol. 56, Is. 8

Номера страниц: 1654-1658

ISSN журнала: 10637834

Место издания: NEW YORK

Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER

Персоны

  • Kuzubov A.A. (Siberian Federal University)
  • Eliseeva N.S. (Siberian Federal University)
  • Krasnov P.O. (Siberian Federal University)
  • Tomilin F.N. (Siberian Federal University)
  • Fedorov A.S. (Siberian Federal University)
  • Tolstaya A.V. (Siberian Federal University)

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