Тип публикации: статья из журнала
Год издания: 2010
Идентификатор DOI: 10.1021/nl1022139
Ключевые слова: Boron nitride, electrical microscopy, optical and mechanical properties, computation, Atomic layer, BN films, Dielectric substrates, Hexagonal boron nitride, Hexagonal boron nitride (h-BN), Layered material, Optical energy band gap, Theoretical calculations, Wavelength ranges, Atoms, Boron, Dielectric materials, Electric properties, Graphene, Graphite, Mechanical properties, Monolayers, Nanoindentation, Nitrides, Optical films, Optical properties, Vapor deposition
Аннотация: Hexagonal boron nitride (h-BN), a layered material similar to graphite, is a promising dielectric. Monolayer h-BN, so-called "white graphene", has been isolated from bulk BN and could be useful as a complementary two-dimensional dielectric substrate for graphene electronics. Here we report the large area synthesis of h-BN Films conПоказать полностьюsisting of two to five atomic layers, using chemical vapor deposition. These atomic films show a large optical energy band gap of 5.5 eV and are highly transparent over a broad wavelength range. The mechanical properties of the h-BN films, measured by nanoincientation, show 2D elastic modulus in the range of 200-500 N/m, which is corroborated by corresponding theoretical calculations.
Журнал: NANO LETTERS
Выпуск журнала: Vol. 10, Is. 8
Номера страниц: 3209-3215
ISSN журнала: 15306984
Место издания: WASHINGTON
Издатель: AMER CHEMICAL SOC