Investigation of properties of laminar antiferromagnetic nanostructures : научное издание

Описание

Тип публикации: статья из журнала

Год издания: 2024

Идентификатор DOI: 10.17580/cisisr.2024.01.13

Ключевые слова: antiferromagnetics, nanostructure, Magnetoresistive materials, voltage, spin valve, anisotropy, bilayer

Аннотация: When creating products using magnetoresistive materials based on magnetic and non-magnetic metals, one is focused on achieving giant magnetoresistance. Such an effect, obtained at the turn of 1980-90-ies years of the last century in superlattices, reached 10-80 % with the intensity of tens of kE at 4.5 K. By methods of physics of mПоказать полностьюagnetic phenomena the regularities of interaction between ferromagnetics and antiferromagnetics, constituting alloys, are determined for strengthening the design of spin valves. Insights into the formation of anisotropy in manganese and permalloy bilayers are detailed. Differences of layer creation causally related to the thermomagnetic activation mode of the process have been determined. The use of alloys in antiferromagnetic nanostructures can indeed lead to the formation of unidirectional anisotropy with changing values of the exchange shift of the hysteresis loop. It has been shown that nanostructures containing alloys exhibit improved magnetism and exchange interaction properties. These results confirm the potential of alloys in creating materials with improved magnetic phenomena and possible applications in various fields such as electronics and magnetic devices.

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Издание

Журнал: CIS Iron and Steel Review

Выпуск журнала: Т. 27

Номера страниц: 84-90

ISSN журнала: 20720815

Место издания: Moscow

Издатель: Магнитогорский государственный технический университет им. Г.И. Носова, "Ore and Metals" Publishing House

Персоны

  • Malozyomov B. V. (Novosibirsk State Technical University)
  • Tynchenko V. S. (Bauman Moscow State Technical University)
  • Kukartsev V. A. (Siberian Federal University)
  • Bashmur K. A. (Siberian Federal University)
  • Panfilova T. A. (Siberian Federal University)

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