Тип публикации: статья из журнала
Год издания: 2020
Идентификатор DOI: 10.1016/j.apsusc.2020.145315
Ключевые слова: Density functional theory, Graphene, Magnetic tunnel junction, Transition metal dichalcogenides, Vanadium ditelluride monolayer
Аннотация: New perspective 1.4 nm thick spin-polarized triple heterostructures based on graphene sandwiched between two vanadium ditelluride monolayers (VTe2/graphene/VTe2) were studied using ab initio DFT technique. Both possible trigonal prismatic (H-VTe2) and octahedral (T-VTe2) VTe2 phases were considered to design and study graphene-baseПоказать полностьюd heterostructures. It was shown that the interaction with graphene changes the electronic structure of 2D T-VTe2 from metallic to half-metallic, making T phase perspective to be used for magnetic tunnel junctions. The electronic subsystem of graphene fragment is slightly hole doped. Calculated tunnel magnetoresistance ratio for the favorable heterostructure configuration estimated within the Julliere model is 220%, which opens a way to use VTe2/graphene/VTe2 as prospective magnetic tunnel junction in novel spintronic nanodevices based on tunnel magnetic resistance and spin transfer torque effects. © 2020 Elsevier B.V.
Журнал: Applied Surface Science
Выпуск журнала: Vol. 510
Номера страниц: 145315
ISSN журнала: 01694332
Издатель: Elsevier B.V.