Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures

Описание

Тип публикации: статья из журнала (материалы конференций, опубликованные в журналах)

Конференция: Moscow International Symposium on Magnetism (MISM); Lomonosov Moscow State Univ, Moscow, RUSSIA; Lomonosov Moscow State Univ, Moscow, RUSSIA

Год издания: 2015

Идентификатор DOI: 10.1016/j.jmmm.2014.11.014

Ключевые слова: Spintronics, Hybrid structures, Magnetoresistance, Magnetoimpedance, Photoinduced magnetoresistance, Magnetic field effects, Magnetic fields, Magnetoelectronics, Schottky barrier diodes, Applied magnetic fields, Back to back Schottky, Dc magnetoresistance, Hybrid structure, Magneto-impedance, Magnetotransport phenomena, Photo-induced, Voltage-controlled, Interface states

Аннотация: We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is founПоказать полностьюd to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz, Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface. (C) 2014 Elsevier B.V. All rights reserved.

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Издание

Журнал: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

Выпуск журнала: Vol. 383

Номера страниц: 69-72

ISSN журнала: 03048853

Место издания: AMSTERDAM

Издатель: ELSEVIER SCIENCE BV

Персоны

  • Volkov N.V. (Siberian Federal University)
  • Tarasov A.S. (Siberian Federal University)
  • Smolyakov D.A. (Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch)
  • Varnakov S.N. (Siberian State Aerospace University)
  • Ovchinnikov S.G. (Siberian Federal University)