Тип публикации: статья из журнала (материалы конференций, опубликованные в журналах)
Конференция: Moscow International Symposium on Magnetism (MISM); Lomonosov Moscow State Univ, Moscow, RUSSIA; Lomonosov Moscow State Univ, Moscow, RUSSIA
Год издания: 2015
Идентификатор DOI: 10.1016/j.jmmm.2014.11.014
Ключевые слова: Spintronics, Hybrid structures, Magnetoresistance, Magnetoimpedance, Photoinduced magnetoresistance, Magnetic field effects, Magnetic fields, Magnetoelectronics, Schottky barrier diodes, Applied magnetic fields, Back to back Schottky, Dc magnetoresistance, Hybrid structure, Magneto-impedance, Magnetotransport phenomena, Photo-induced, Voltage-controlled, Interface states
Аннотация: We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is founПоказать полностьюd to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz, Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface. (C) 2014 Elsevier B.V. All rights reserved.
Журнал: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Выпуск журнала: Vol. 383
Номера страниц: 69-72
ISSN журнала: 03048853
Место издания: AMSTERDAM
Издатель: ELSEVIER SCIENCE BV