Tailoring the preferable orientation relationship and shape of alpha-FeSi(2)nanocrystals on Si(001): the impact of gold and the Si/Fe flux ratio, and the origin of alpha/Si boundaries : научное издание

Описание

Тип публикации: статья из журнала

Год издания: 2020

Идентификатор DOI: 10.1039/d0ce00399a

Аннотация: The growth of alpha-FeSi(2)nanocrystal ensembles on gold-activated and gold-free Si(001) surfaces at different Si/Fe flux ratiosviamolecular beam epitaxy is reported. The study reveals that the utilisation of gold as a catalyst regulates the preferable orientation relationship (OR) of the nanocrystals to silicon and their morphologПоказать полностьюy at a given Si/Fe flux ratio. alpha-FeSi(2)free-standing crystals with continuously tuned sizes from 30 nm up to several micrometres can be grown with an alpha(001)//Si(001) basic OR under gold-assisted conditions and an alpha(111)//Si(001) OR under gold-free growth conditions on a Si(001) surface. The preferred morphology of nanocrystals with a particular OR can be altered through changes to the Si/Fe flux ratio. Herein, the microstructure and basic OR between the silicide nanocrystals and the silicon substrate, and the formation of nanocrystal facets were analysed in detail with the help of microscopic techniques and simulation methods based on the analysis of near coincidence site (NCS) distributions at silicide/silicon interfaces. On the basis of the simulations used, we managed to reveal the nature of the interfaces observed for the main types of alpha-FeSi(2)nanocrystals grown. Three types of interfaces typical for nanoplates with an alpha(001)//Si(001) basic OR, which are (i) stepped, (ii) stressed, and (iii) flat, are explained based on the tendency for the NCS density to increase at the interface. The results presented reveal the potential for the bottom-up fabrication of alpha-FeSi(2)nanocrystals with tuned physical properties as potentially important contact materials and as building blocks for future nanoelectronic devices. The growth of α-FeSi2nanocrystal ensembles on gold-activated and gold-free Si(001) surfaces at different Si/Fe flux ratiosviamolecular beam epitaxy is reported. The study reveals that the utilisation of gold as a catalyst regulates the preferable orientation relationship (OR) of the nanocrystals to silicon and their morphology at a given Si/Fe flux ratio. α-FeSi2free-standing crystals with continuously tuned sizes from 30 nm up to several micrometres can be grown with an α(001)//Si(001) basic OR under gold-assisted conditions and an α(111)//Si(001) OR under gold-free growth conditions on a Si(001) surface. The preferred morphology of nanocrystals with a particular OR can be altered through changes to the Si/Fe flux ratio. Herein, the microstructure and basic OR between the silicide nanocrystals and the silicon substrate, and the formation of nanocrystal facets were analysed in detail with the help of microscopic techniques and simulation methods based on the analysis of near coincidence site (NCS) distributions at silicide/silicon interfaces. On the basis of the simulations used, we managed to reveal the nature of the interfaces observed for the main types of α-FeSi2nanocrystals grown. Three types of interfaces typical for nanoplates with an α(001)//Si(001) basic OR, which are (i) stepped, (ii) stressed, and (iii) flat, are explained based on the tendency for the NCS density to increase at the interface. The results presented reveal the potential for the bottom-up fabrication of α-FeSi2nanocrystals with tuned physical properties as potentially important contact materials and as building blocks for future nanoelectronic devices. © The Royal Society of Chemistry 2020.

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Издание

Журнал: CRYSTENGCOMM

Выпуск журнала: Vol. 22, Is. 23

Номера страниц: 3943-3955

ISSN журнала: 14668033

Место издания: CAMBRIDGE

Издатель: ROYAL SOC CHEMISTRY

Авторы

  • Tarasov Ivan A. (KSC SB RAS, Fed Res Ctr, Kirensky Inst Phys, Krasnoyarsk 660036, Russia)
  • Smolyarova Tatyana E. (KSC SB RAS, Fed Res Ctr, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Krasnoyarsk 660041, Russia)
  • Nemtsev Ivan (KSC SB RAS, Fed Res Ctr, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Fed Res Ctr KSC SB RAS, Krasnoyarsk 660036, Russia)
  • Yakovlev Ivan A. (KSC SB RAS, Fed Res Ctr, Kirensky Inst Phys, Krasnoyarsk 660036, Russia)
  • Volochaev Mihail N. (KSC SB RAS, Fed Res Ctr, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Reshetnev Siberian State Univ Sci & Technol, Krasnoyarsk 660037, Russia)
  • Solovyov Leonid A. (Fed Res Ctr KSC SB RAS, Inst Chem & Chem Technol, Krasnoyarsk 660036, Russia)
  • Varnakov Sergey N. (KSC SB RAS, Fed Res Ctr, Kirensky Inst Phys, Krasnoyarsk 660036, Russia)
  • Ovchinnikov Sergey G. (KSC SB RAS, Fed Res Ctr, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Krasnoyarsk 660041, Russia)