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Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure : научное издание

Описание

Тип публикации: статья из журнала

Год издания: 2019

Идентификатор DOI: 10.1088/1361-6641/ab0327

Ключевые слова: spin accumulation, interface states, hybrid structures, Hanle effect, iron silicide

Аннотация: Spin accumulation effect in Fe3Si/p-Si structure with low boron doped silicon substrate was found. Calculated spin lifetimes are comparable with results reported earlier but for structures with highly doped semiconductors (SC) with or without a tunnel bar Spin accumulation effect in Fe 3 Si/p-Si structure with low boron doped silicПоказать полностьюon substrate was found. Calculated spin lifetimes are comparable with results reported earlier but for structures with highly doped semiconductors (SC) with or without a tunnel b

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Издание

Журнал: SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Выпуск журнала: Vol. 34, Is. 3

Номера страниц: 35024

ISSN журнала: 02681242

Место издания: BRISTOL

Издатель: IOP PUBLISHING LTD

Персоны

  • Tarasov A.S. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, RussiaArticle)
  • Lukyanenko A.V (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, RussiaArticle)
  • Rautskii M.V (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia)
  • Bondarev I.A. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, RussiaArticle)
  • Smolyakov D.A. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia)
  • Tarasov I.A. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia)
  • Yakovlev I.A. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia)
  • Varnakov S.N. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, RussiaArticle)
  • Ovchinnikov S.G. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia)
  • Baron F.A. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia)
  • Volkov N.V. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia)

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