Тип публикации: статья из журнала

Год издания: 2023

Идентификатор DOI: 10.3390/pr11082236

Ключевые слова: MAX phase, thin film, magnetron sputtering, electronic transport, optical spectra

Аннотация: <jats:p>The growth and phase formation features, along with the influence of structure and morphology on the electronic, optical, and transport properties of Cr2GeC and Cr2-xMnxGeC MAX phase thin films synthesized by magnetron sputtering technique, were studied. It was found that the Cr:Ge:C atomic ratios most likely play the main Показать полностьюrole in the formation of a thin film of the MAX phase. A slight excess of carbon and manganese doping significantly improved the phase composition of the films. Cr2GeC films with a thicknesses exceeding 40 nm consisted of crystallites with well-developed facets, exhibiting metallic optical and transport properties. The hopping conduction observed in the Cr2-xMnxGeC film could be attributed to the columnar form of crystallites. Calculations based on a two-band model indicated high carrier concentrations N, P and mobility μ in the best-synthesized Cr2GeC film, suggesting transport properties close to single crystal material. The findings of this study can be utilized to enhance the growth technology of MAX phase thin films.</jats:p>

Журнал: Processes

Выпуск журнала: Т.11, №8

Номера страниц: 2236

ISSN журнала: 22279717

• Tarasov Anton S. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia)
• Lyaschenko Sergey A. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia)
• Rautskii Mikhail V. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia)
• Lukyanenko Anna V. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia)
• Andryushchenko Tatiana A. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia)
• Solovyov Leonid A. (Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia)
• Yakovlev Ivan A. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia)
• Maximova Olga A. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia)
• Shevtsov Dmitriy V. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia)
• Bondarev Mikhail A. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia)
• Bondarev Ilya A. (Krasnoyarsk Scientific Center, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia)
• Ovchinnikov Sergei G. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia)
• Varnakov Sergey N. (Krasnoyarsk Scientific Center, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia)

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