BT-30 Ceramic Electrophysical Properties


Тип публикации: статья из журнала

Год издания: 2020

Идентификатор DOI: 10.1007/s11148-020-00484-2

Ключевые слова: (beo + tio2)-ceramic, electrical resistance activation energy, electrophysical properties

Аннотация: A total complex resistance (impedance) method is used to study the electrophysical characteristics of (BeO + TiO2)-ceramics modified with TiO2 micro- and nanoparticles in an amount of 30 wt.% (BT-30). Dispersion of the actual ε′ and imaginary ε′′ components of the dielectric permittivity component and specific conductivity in the fПоказать полностьюrequency range from 100 Hz to 100 MHz from room temperature to the boiling point of liquid nitrogen are determined. High values of ε′ and ε′′ in the low-frequency range are typical for structurally inhomogeneous materials due to the accumulation of electric charges at the surface and within microcrystals. Two dielectric relaxation processes associated with electrical conductivity within the body and at the surface of ceramics are detected for the first time. An increase in conductivity with an increase in the microwave field frequency above 1 MHz is explained by the appearance of a current relaxation component. The activation energy of the static resistance of ceramic specimens is determined as a function of the reciprocal temperature that depends little on the weight content of TiO2 nanoparticles and varies in the range of 0.024 – 0.10 eV This also confirms the existence of two independent conduction processes, weakly dependent on the nanoparticle content in the ceramic composition. With placement of ceramic in a high-frequency electric field, spatial charges are formed, the field of which contributes to creation of additional polarization and dielectric losses. © 2020, Springer Science+Business Media, LLC, part of Springer Nature.

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Журнал: Refractories and Industrial Ceramics

Выпуск журнала: Vol. 61, Is. 3

Номера страниц: 341-348

ISSN журнала: 10834877

Издатель: Springer


  • Drokin N.A. (FGBOU VO Academician MF Reshetnev Siberian Aerosp, Krasnoyarsk, Russia; Russian Acad Sci, Siberian Sect, Krasnoyarsk Sci Ctr, FGBUN Fed Res Ctr, Krasnoyarsk, Russia)
  • Kiiko V.S. (FGAOU VO Ural Fed Univ, Ekaterinburg, Russia)
  • Pavlov A.V (FGAOU VO Siberian Fed Univ, Krasnoyarsk, Russia)
  • Malkin A.I (FGAOU VO Ural Fed Univ, Ekaterinburg, Russia)