Тип публикации: статья из журнала
Год издания: 2015
Идентификатор DOI: 10.1016/j.jallcom.2015.04.056
Ключевые слова: Transition metal alloys and compounds, Disordered system, Semiconductors, Electrical transport, Charge transfer, Chemical activation, Cobalt, Crystal atomic structure, Semiconductor materials, Single crystals, Temperature, Temperature distribution, Transition metal alloys, Transition metals, Activation mechanisms, Charge transfer mechanisms, High temperature range, Mott variable-range hopping, Temperature dependence, Activation energy
Аннотация: The temperature dependence of the resistivity of single crystalline Mg1-xCoxFeBO4 samples with x = 0.0, 0.5, 1.0 is investigated for the temperature range (210-400 K). The conduction was found to be governed by Mott variable-range hopping (VRH) in the low-temperature range (T = 210-270 K) and by thermo-activation mechanism in the hПоказать полностьюigh-temperature range (T = 280-400 K). Microscopic electronic parameters, such as the density of the localized states near the Fermi level, localization length, the hopping length, and the activation energy have been obtained. The change of the activation energy observed at high-temperature range was attributed to local structure distortions around Fe and Co atoms. The complicated behavior of charge transfer mechanisms is discussed based on two approaches: atomic disorder and electron correlations. (C) 2015 Elsevier B.V. All rights reserved.
Журнал: JOURNAL OF ALLOYS AND COMPOUNDS
Выпуск журнала: Vol. 642
Номера страниц: 232-237
ISSN журнала: 09258388
Место издания: LAUSANNE
Издатель: ELSEVIER SCIENCE SA