Тип публикации: статья из журнала
Год издания: 2008
Идентификатор DOI: 10.1063/1.2973464
Ключевые слова: Electric currents, Electric wire, Electronic states, Electronic structure, Nanostructured materials, Nanostructures, Nanowires, Nonmetals, Optical waveguides, Plasma confinement, Quantum confinement, Quantum electronics, Semiconducting silicon compounds, Silicon, ) electronic state, Band gaps, Electron confinements, Electronic-structure calculations, Embedded structures, Quantum confinement effect, Quantum dots, Semi-empirical methods, Silicon nanowires, Silicon quantum dots, Semiconductor quantum dots
Аннотация: Motivated by the experimental discovery of branched silicon nanowires, we performed theoretical electronic structure calculations of icosahedral silicon quantum dots embedded into pentagonal silicon nanowires. Using the semiempirical method, we studied the quantum confinement effect in the fully optimized embedded structures. It waПоказать полностьюs found that (a) the band gaps of the embedded structures are closely related to the linear sizes of the longest constituting part rather than to the total linear dimension and (b) the discovered atypical quantum confinement with a plateau and a maximum can be attributed to the substantial interactions of near Fermi level electronic states of the quantum dots and nanowire segments. (c) 2008 American Institute of Physics.
Журнал: JOURNAL OF APPLIED PHYSICS
Выпуск журнала: Vol. 104, Is. 5
Номера страниц: 054305
ISSN журнала: 00218979
Место издания: MELVILLE
Издатель: AMER INST PHYSICS