Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum

Описание

Тип публикации: статья из журнала

Год издания: 2015

Идентификатор DOI: 10.1134/S1063782615120039

Аннотация: The longitudinal and Hall magnetoresistances of HgTe/HgCdTe heterostructures with an inverted energy spectrum (the HgTe quantum well width is d = 20.3 nm) are measured in the quantum-Hall-effect regime at T = 2–50 K in magnetic fields up to B = 9 T. Analysis of the temperature dependences of conductivity in the transition region beПоказать полностьюtween the first and second plateaus of the quantum Hall effect shows the feasibility of the scaling regime for a plateau–plateau quantum phase transition in 2D-structures on the basis of mercury telluride. © 2015, Pleiades Publishing, Ltd.

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Издание

Журнал: Semiconductors

Выпуск журнала: Vol. 49, Is. 12

Номера страниц: 1545-1549

Персоны

  • Arapov Y.G. (Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, Russian Federation)
  • Gudina S.V. (Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, Russian Federation)
  • Neverov V.N. (Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, Russian Federation)
  • Podgornykh S.M. (Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, Russian Federation, Yeltsin Ural Federal University, ul. Mira 19, Yekaterinburg, Russian Federation)
  • Popov M.R. (Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, Russian Federation)
  • Harus G.I. (Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, Russian Federation)
  • Shelushinina N.G. (Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, Russian Federation)
  • Yakunin M.V. (Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, Russian Federation, Yeltsin Ural Federal University, ul. Mira 19, Yekaterinburg, Russian Federation)
  • Mikhailov N.N. (Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akad. Lavrent’eva 13, Novosibirsk, Russian Federation, Novosibirsk State University, ul. Pirogova 2, Novosibirsk, Russian Federation)
  • Dvoretsky S.A. (Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akad. Lavrent’eva 13, Novosibirsk, Russian Federation, National Research Tomsk State University, pr. Lenina 36, Tomsk, Russian Federation)

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