Тип публикации: статья из журнала

Год издания: 2022

Идентификатор DOI: 10.21883/sc.2022.03.53058.9765

Аннотация: <jats:p> The radial distribution of mechanical stress, optical inhomogeneity and oxygen concentration in Sb-doped germanium crystals grown by the Czochralski method with diameter of 200 mm and resistivity from 10.5 to 18.5 Ω·cm were studied. It was found that residual stress calculated from the data of X-ray structural analysis corПоказать полностьюrelates with results of numerical simulation of thermoelastic stress and interrelates with optical inhomogeneity and concentration of oxygen presented in the atomically dispersed state in germanium. </jats:p>

Журнал: Semiconductors

Выпуск журнала: Т. 56, № 3

Номера страниц: 276

ISSN журнала: 10637826

Издатель: Ioffe Institute Russian Academy of Sciences

• Shimanskii A.F. (Siberian Federal University, Krasnoyarsk, Russia)
• Kravtsova E.D. (Siberian Federal University, Krasnoyarsk, Russia)
• Kulakovskaya T.V (JSC Germanium, Krasnoyarsk, Russia)
• Grigorovich A.P. (JSC Germanium, Krasnoyarsk, Russia)
• Kopytkova S.A. (JSC Germanium, Krasnoyarsk, Russia)
• Smirnov A.D. (STR Group, Inc., St-Petersburg, Russia)

• РИНЦ (eLIBRARY.RU)