Тип публикации: статья из журнала

Год издания: 2014

Идентификатор DOI: 10.1134/S1995078014010108

Ключевые слова: Activation energy, Chemical modification, Fluorination, Fluorine, Grain boundaries, Halogenation, Hydrofluoric acid, Photoelectrons, X ray photoelectron spectroscopy, Characteristic peaks, Controlled modification, Energy of activation, Fluorination reactions, Functionalizations, Orders of magnitude, Polycrystalline film, Preliminary treatment, Graphene

Аннотация: The possibility of the controlled modification of the properties of graphene and few-layer graphene significantly extends the scope of their potential applications. Conditions for the chemical modification of graphene and few-layer graphene in an hydrofluoric acid aqueous (HF) solution were revealed in this work. The following chanПоказать полностьюges in the properties of films upon their treatment in an aqueous HF solution were observed: a sharp (by 5-7 orders of magnitude) jump in the resistance of samples, the suppression of characteristic peaks in Raman spectra, the occurrence of peaks from fluorine ions F (687.7 eV) and C-F bonds (288 eV) in X-ray photoelectron spectroscopy (XPS) spectra, and the formation of a nanorelief on the surface. The reaction with HF possesses an activation character (with an energy of 1.4 eV), depending on the temperature; the reaction proceeds in a narrow range of concentrations of HF solution and is reversible. An array of experimental data made it possible to suggest that the functionalization of films was due to fluorination. The recovery of the conductivity of films after the annealing of samples at a temperature of 450°C (the energy of activation of the annealing ?2 eV) is one of the confirmations of the fluorination process. It was shown that the fluorination reaction in an aqueous HF solution was initiated on the grain boundaries of polycrystalline films of graphene and few-layer graphene. It was found that the interaction of few-layer graphene with HF depended significantly on the thickness of samples and their preliminary treatment. A model for the fluorination of a few-layer film based on the corrugating of layers because of the difference in the lattice constants of graphene and fluorographene was suggested. © 2014 Pleiades Publishing, Ltd.

Журнал: Nanotechnologies in Russia

Выпуск журнала: Vol. 9, Is. 1-2

Номера страниц: 51-59

• Nebogatikova N.A. (Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russian Federation, A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090, Ru)
• Antonova I.V. (A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090, Russian Federation)
• Prinz V.Y. (A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090, Russian Federation)
• Volodin V.A. (Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russian Federation, A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090, Russian)
• Zatsepin D.A. (Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, 620990, Russian Federation, Ural Federal University, ul. Mira 19, Yekaterinburg, 620002, Russian Federation)
• Kurmaev E.Z. (Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, 620990, Russian Federation)
• Zhidkov I.S. (Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, 620990, Russian Federation, Ural Federal University, ul. Mira 19, Yekaterinburg, 620002, Russian Federation)
• Cholakh S.O. (Ural Federal University, ul. Mira 19, Yekaterinburg, 620002, Russian Federation)

• Scopus