Тип публикации: статья из журнала
Год издания: 2023
Идентификатор DOI: 10.1002/apxr.202200056
Ключевые слова: near-infrared luminescence, phosphor, site occupation, tunable emissions
Аннотация: Near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) are desired for optoelectronic and biomedical applications, while the development of target broadband NIR phosphors still remains a significant challenge. Herein, a kind of Cr3+‐doped AlNbO4 phosphors with a broad NIR emission ranging from 650 to 1400 nm under 4Показать полностью50 nm excitation are reported. A giant red‐shift emission peak from 866 to 1020 nm together with broadened full width at half‐maximum of 320 nm is achieved simply by varying the doped Cr3+ concentrations. Structural and spectroscopy analysis demonstrate that a concentration‐dependent site‐occupation of Cr3+ emitters in different Al3+ sites is responsible for the tunable NIR luminescence. The as‐fabricated NIR pc‐LED based on optimized AlNbO4:Cr3+ phosphor exhibits great potential in night‐vision applications. This work provides a novel design principle on the Cr3+‐doped AlNbO4 phosphor with tunable broadband luminescence from NIR‐I to NIR‐II, and these materials can be employed in NIR spectroscopy applications. Al1−xNbO4:xCr3+ phosphors exhibit broadband near‐infrared (NIR) emissions with a dramatic redshift with an increase of Cr3+ concentration， which is attributed to double Cr3+ emission centers, comfirmed by structural and spectral analysis. The NIR phosphor‐converted light‐emitting diode device is fabricated and a night‐visible image and transmittance spectra are captured, suggesting potential for NIR spectroscopy applications.
Журнал: Advanced Physics Research
Выпуск журнала: Т. 2, № 4
Номера страниц: 2200056
ISSN журнала: 27511200
Место издания: Berlin
Издатель: John Wiley & Sons