Тип публикации: статья из журнала

Год издания: 2011

Идентификатор DOI: 10.1134/S1063783411020247

Аннотация: The concentration dependence of the entropy of doped Mott-Hubbard insulators has been considered within the t-J model. It has been shown that a change in the type and statistics of charge carriers as compared to the Fermi gas leads to a radical change in the entropy s, in particular, to the giant growth of the entropy upon doping. Показать полностьюThe quantity a,s/a,x a parts per thousand k (B) is approximately consistent with the experimental data for HTSC cuprates in the pseudogap phase.

Журнал: PHYSICS OF THE SOLID STATE

Выпуск журнала: Vol. 53, Is. 2

Номера страниц: 299-302

ISSN журнала: 10637834

Место издания: NEW YORK

Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER

• Ovchinnikov S.G. (Siberian Federal University)
• Sidorov K.A. (Kirensky Institute of Physics, Siberian Branch,Russian Academy of Sciences)
• Shneyder E.I. (Reshetnev Siberian State Aerospace University)

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