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The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier

Описание

Тип публикации: статья из журнала

Год издания: 2014

Идентификатор DOI: 10.1063/1.4881715

Ключевые слова: Magnetic fields, MIS devices, Schottky barrier diodes, Semiconductor diodes, Silicon, Applied magnetic fields, Charging dynamics, Energy structures, Giant magneto impedance effect, Low frequency regions, Metal insulator semiconductor structures, Metal-insulator-semiconductor diodes, Schottky barriers, Interface states

Аннотация: We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic fПоказать полностьюield was found. The maximum value of this effect was observed at temperatures of 10-30 K in the frequency range of 10 Hz-1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (

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Издание

Журнал: APPLIED PHYSICS LETTERS

Выпуск журнала: Vol. 104, Is. 22

ISSN журнала: 00036951

Место издания: MELVILLE

Издатель: AMER INST PHYSICS

Персоны

  • Volkov N.V. (Institute of Engineering Physics and Radio Electronics, Siberian Federal University)
  • Tarasov A.S. (Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch)
  • Smolyakov D.A. (Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch)
  • Gustaitsev A.O. (Institute of Engineering Physics and Radio Electronics, Siberian Federal University)
  • Balashev V.V. (School of Natural Sciences, Far Eastern Federal University)
  • Korobtsov V.V. (School of Natural Sciences, Far Eastern Federal University)

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