Тип публикации: статья из журнала
Год издания: 2018
Идентификатор DOI: 10.1134/S1063782618020161
Аннотация: Homogeneous Sb-doped single crystals of Ge–Si solid solutions are grown with a silicon content of 0.2 to 0.8 at %. The optical absorption of single crystals with a resistivity of (2–3) Ω cm is studied by IR Fourier spectroscopy at a wavelength of 10.6 μm in the temperature range from 25 to 60°C. It is found that the introduction ofПоказать полностьюsilicon into antimony-doped germanium improves the temperature stability of the optical properties of the crystals. © 2018, Pleiades Publishing, Ltd.
Журнал: Semiconductors
Выпуск журнала: Vol. 52, Is. 2
Номера страниц: 264-267
ISSN журнала: 10637826
Издатель: Maik Nauka-Interperiodica Publishing