Solid state synthesis of Mn5Ge3 in Ge/Ag/Mn trilayers: Structural and magnetic studies : научное издание


Тип публикации: статья из журнала

Год издания: 2017

Идентификатор DOI: 10.1016/j.jssc.2016.12.010

Ключевые слова: Diffusion barrier, Dominant diffusing species, First phase, Long-range atomic transfer, Mn-Ge system, Mn5Ge3 alloy, Thin-film solid-state reaction

Аннотация: The thin-film solid-state reaction between elemental Ge and Mn across chemically inert Ag layers with thicknesses of (0, 0.3, 1 and 2.2 µm) in Ge/Ag/Mn trilayers was studied for the first time. The initial samples were annealed at temperatures between 50 and 500 °C at 50 °C intervals for 1 h. The initiation temperature of the reactПоказать полностьюion for Ge/Mn (without a Ag barrier layer) was ~ 120 °C and increased slightly up to ~ 250 °C when the Ag barrier layer thickness increased up to 2.2 µm. In spite of the Ag layer, only the ferromagnetic Mn5Ge3 compound and the Nowotny phase were observed in the initial stage of the reaction after annealing at 500 °C. The cross-sectional studies show that during Mn5Ge3 formation the Ge is the sole diffusing species. The magnetic and cross-sectional transmission electron microscopy (TEM) studies show an almost complete transfer of Ge atoms from the Ge film, via a 2.2 µm Ag barrier layer, into the Mn layer. We attribute the driving force of the long-range transfer to the long-range chemical interactions between reacting Mn and Ge atoms.

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Журнал: Journal of Solid State Chemistry

Выпуск журнала: Т. 246

Номера страниц: 379-387

ISSN журнала: 00224596

Издатель: Academic Press


  • Myagkov V.G. (Kirensky Institute of Physics SB RAS)
  • Bykova L.E. (Kirensky Institute of Physics SB RAS)
  • Matsynin A.A. (Kirensky Institute of Physics SB RAS)
  • Volochaev M.N. (Kirensky Institute of Physics SB RAS)
  • Zhigalov V.S. (Kirensky Institute of Physics SB RAS)
  • Tambasov I.A. (Kirensky Institute of Physics SB RAS)
  • Velikanov D.A. (Kirensky Institute of Physics SB RAS)
  • Mikhlin Y.L. (Institute of Chemistry and Chemical Technology SB RAS)
  • Bondarenko G.N. (Institute of Chemistry and Chemical Technology SB RAS)

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