Synthesis of Spatial Band-Pass Filter Based on Frequency-Selective Surfaces

Описание

Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций

Конференция: Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2021

Год издания: 2021

Идентификатор DOI: 10.1109/USBEREIT51232.2021.9455106

Ключевые слова: band-pass filter, chebyshev filter, frequency selective surface, periodic structure, spatial filter

Аннотация: This article presents a synthesis process of a spatial band-pass filter based on frequency-selective surfaces (FSS) using specially developed software. A correlation between the filter based on frequency-selective surfaces, equivalent quasipolynomial filter and Chebyshev band-pass filter is shown. A synthesis process and calculatioПоказать полностьюn results of the third order filters of various implementations are presented. An amplitude-frequency characteristics comparative analysis of the synthesized filters based on FSS with characteristics of various LC-filters has been performed. Sizes of frequency-selective surface cells are subwavelength, that allows to create structures with small thickness. An electrodynamic model of the spatial filter was built based on calculation results of a single frequency-selective surfaces element. Transmission and reflection coefficients of the spatial filter based on frequency-selective surfaces were calculated. The calculated characteristics have a good matching with characteristics of equivalent LC-filters. The synthesized filters can be used as phase-correcting elements of the transmitarray antennas or the low-profile scanning antenna systems. The thickness of the frequency-selective surface structure depends on operating wavelength, filter order and initial values of capacities and inductances. © 2021 IEEE.

Ссылки на полный текст

Издание

Журнал: Proceedings - 2021 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2021

Номера страниц: 234-237

Издатель: Institute of Electrical and Electronics Engineers Inc.

Персоны

  • Stankovsky A.V. (Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation)
  • Litinskaya Y.A. (Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation)
  • Nemshon A.D. (Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation)
  • Polenga S.V. (Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation)
  • Salomatov Y.P. (Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation)

Вхождение в базы данных