Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций

Конференция: International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019

Год издания: 2019

Идентификатор DOI: 10.1088/1742-6596/1410/1/012017

Аннотация: In this work we show a preparation technique of Co2FeSi full-Heusler alloy thin films on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The films of the Co2FeSi alloy were formed by a silicidation reaction, caused by RTA, between the ultrathin SOI (001) layer and the Fe/Co layers deposited on it. ItПоказать полностьюis assumed that this technology is compatible with the process of formation of a half-metal source-drain in an advanced CMOS and SOI technology and will be applicable for the manufacture of a source-drain of a field-effect transistor. Schottky barrier field-effect transistors (FET) with a back-gate, based on silicon nanowires with source and drain of a Co2FeSi film, synthesized on an SOI substrate, were manufactured. The transport properties of the device were investigated. © Published under licence by IOP Publishing Ltd.

Журнал: Journal of Physics: Conference Series

Выпуск журнала: Vol. 1410, Is. 1

Номера страниц: 12017

ISSN журнала: 17426588

Издатель: Institute of Physics Publishing

• Lukyanenko A.V. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
• Tarasov A.S. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
• Shanidze L.V. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
• Yakovlev I.A. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation)
• Zelenov F.V. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation)
• Masugin A.N. (Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, 660037, Russian Federation)
• Ivanov A.B. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation)
• Baron F.A. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation)
• Volkov N.V. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation)

• Scopus
• Ядро РИНЦ (eLIBRARY.RU)