Тип публикации: статья из журнала (материалы конференций, опубликованные в журналах)
Конференция: Moscow International Symposium on Magnetism (MISM 2011); Lomonosov Moscow State Univ, Moscow, RUSSIA; Lomonosov Moscow State Univ, Moscow, RUSSIA
Год издания: 2012
Идентификатор DOI: 10.1016/j.jmmm.2012.02.095
Ключевые слова: Spintronics, Magnetic tunnel junction, High-frequency rectification, Photoelectric effect, Co-operative assembly, High frequency HF, Magnetic tunnels, Microwave detection, Optical radiations, Spin-polarized currents, Switching effect, Tunnel magnetoresistance, Electric rectifiers, Electric resistance, Magnetic devices, Magnetic fields, Magnetoelectronics, Magnetoresistance, Manganese oxide, Photoelectricity, Transport properties
Аннотация: Different phenomena that give rise to a spin-polarized current in some systems with magnetic tunnel junctions are considered. In a manganite-based magnetic tunnel structure in CIP geometry, the effect of current-channel switching was observed, which causes bias-driven magnetoresistance, rf rectification, and the photoelectric effecПоказать полностьюt. The second system under study, ferromagnetic/insulator/semiconductor, exhibits the features of the transport properties in CIP geometry that are also related to the current-channel switching effect. The described properties can be controlled by a bias, a magnetic field, and optical radiation. At last, the third system under consideration is a cooperative assembly of magnetic tunnel junctions. This system exhibits tunnel magnetoresistance and the magnetic-field-driven microwave detection effect. (C) 2012 Elsevier BY. All rights reserved.
Журнал: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Выпуск журнала: Vol. 324, Is. 21
Номера страниц: 3579-3583
ISSN журнала: 03048853
Место издания: AMSTERDAM
Издатель: ELSEVIER SCIENCE BV