Тип публикации: статья из журнала

Год издания: 2015

Идентификатор DOI: 10.1134/S1063782615120131

Аннотация: The magnetoabsorption in magnetic fields as high as 40 T is investigated at T 77 K in HgTe/CdHgTe quantum-well heterostructures (dQW ? 8 nm). The spectra reveal two lines associated both with intraband transition from the lower Landau level in the conduction band and with interband transition. It is shown that the band structure iПоказать полностьюn these systems changes from inverted to normal with increasing temperature. © 2015, Pleiades Publishing, Ltd.

Журнал: Semiconductors

Выпуск журнала: Vol. 49, Is. 12

Номера страниц: 1611-1615

• Platonov V.V. (Sarov Physical–Technical Institute—National Research Nuclear University MEPhI, Sarov, Russian Federation, Russian Federal Nuclear Center—All-Russia Institute of Experimental Physics, Sarov, Russian Federation)
• Kudasov Y.B. (Sarov Physical–Technical Institute—National Research Nuclear University MEPhI, Sarov, Russian Federation, Russian Federal Nuclear Center—All-Russia Institute of Experimental Physics, Sarov, Russian Federation)
• Makarov I.V. (Sarov Physical–Technical Institute—National Research Nuclear University MEPhI, Sarov, Russian Federation, Russian Federal Nuclear Center—All-Russia Institute of Experimental Physics, Sarov, Russian Federation)
• Maslov D.A. (Sarov Physical–Technical Institute—National Research Nuclear University MEPhI, Sarov, Russian Federation, Russian Federal Nuclear Center—All-Russia Institute of Experimental Physics, Sarov, Russian Federation)
• Surdin O.M. (Sarov Physical–Technical Institute—National Research Nuclear University MEPhI, Sarov, Russian Federation, Russian Federal Nuclear Center—All-Russia Institute of Experimental Physics, Sarov, Russian Federation)
• Zholudev M.S. (Institute of Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russian Federation, Lobachevsky Nizhny Novgorod State University, Nizhny Novgorod, Russian Federation)
• Ikonnikov A.V. (Institute of Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russian Federation, Lobachevsky Nizhny Novgorod State University, Nizhny Novgorod, Russian Federation)
• Gavrilenko V.I. (Institute of Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russian Federation, Lobachevsky Nizhny Novgorod State University, Nizhny Novgorod, Russian Federation)
• Mikhailov N.N. (Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russian Federation, Novosibirsk State University, Novosibirsk, Russian Federation)
• Dvoretsky S.A. (Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russian Federation, Novosibirsk State University, Novosibirsk, Russian Federation)

• Scopus